English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTD4813NHT4GRochester Electronics |
MOSFET N-CH 30V 7.6A/40A DPAK |
|
FCU600N65S3R0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 6A IPAK |
|
NVMFS5C404NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 370A 5DFN |
|
SQJ474EP-T2_GE3Vishay / Siliconix |
MOSFET N-CH 100V 26A PPAK SO-8 |
|
IRLR8726TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 86A DPAK |
|
IPP120N06S4H1AKSA2Rochester Electronics |
IPP120N06 - OPTIMOS N-CHANNEL |
|
FDMS86500DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 29A DLCOOL56 |
|
TK17E80W,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 800V 17A TO220 |
|
IRF3805PBFIR (Infineon Technologies) |
MOSFET N-CH 55V 75A TO220AB |
|
STP18N65M2STMicroelectronics |
MOSFET N-CH 650V 12A TO220 |
|
RCD075N19TLROHM Semiconductor |
MOSFET N-CH 190V 7.5A CPT3 |
|
TSM9N90ECI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 900V 9A ITO220AB |
|
MCH3375-TL-HRochester Electronics |
MOSFET P-CH 30V 1.6A SC70 |
