English
简体中文
RES 909K OHM 1% 1/4W 1206
MOSFET N-CH 100V 26A PPAK SO-8
CONN PLUG HSG 6POS 3.30MM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 26A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 30mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 30 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1100 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 45W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRLR8726TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 86A DPAK |
|
IPP120N06S4H1AKSA2Rochester Electronics |
IPP120N06 - OPTIMOS N-CHANNEL |
|
FDMS86500DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 29A DLCOOL56 |
|
TK17E80W,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 800V 17A TO220 |
|
IRF3805PBFIR (Infineon Technologies) |
MOSFET N-CH 55V 75A TO220AB |
|
STP18N65M2STMicroelectronics |
MOSFET N-CH 650V 12A TO220 |
|
RCD075N19TLROHM Semiconductor |
MOSFET N-CH 190V 7.5A CPT3 |
|
TSM9N90ECI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 900V 9A ITO220AB |
|
MCH3375-TL-HRochester Electronics |
MOSFET P-CH 30V 1.6A SC70 |
|
BSH205G2235Rochester Electronics |
P-CHANNEL MOSFET |
|
BUK9628-100A,118Nexperia |
MOSFET N-CH 100V 49A D2PAK |
|
NTD3055L170T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 9A DPAK |
|
AUIRLL024NTR-IRRochester Electronics |
AUTOMOTIVE POWER MOSFET |