类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 7.6A (Ta), 40A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 11.5V |
rds on (max) @ id, vgs: | 13mOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 10 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 940 pF @ 12 V |
场效应管特征: | - |
功耗(最大值): | 1.27W (Ta), 35.3W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DPAK |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FCU600N65S3R0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 6A IPAK |
|
NVMFS5C404NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 370A 5DFN |
|
SQJ474EP-T2_GE3Vishay / Siliconix |
MOSFET N-CH 100V 26A PPAK SO-8 |
|
IRLR8726TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 86A DPAK |
|
IPP120N06S4H1AKSA2Rochester Electronics |
IPP120N06 - OPTIMOS N-CHANNEL |
|
FDMS86500DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 29A DLCOOL56 |
|
TK17E80W,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 800V 17A TO220 |
|
IRF3805PBFIR (Infineon Technologies) |
MOSFET N-CH 55V 75A TO220AB |
|
STP18N65M2STMicroelectronics |
MOSFET N-CH 650V 12A TO220 |
|
RCD075N19TLROHM Semiconductor |
MOSFET N-CH 190V 7.5A CPT3 |
|
TSM9N90ECI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 900V 9A ITO220AB |
|
MCH3375-TL-HRochester Electronics |
MOSFET P-CH 30V 1.6A SC70 |
|
BSH205G2235Rochester Electronics |
P-CHANNEL MOSFET |