类型 | 描述 |
---|---|
系列: | * |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IRFD9014PBFVishay / Siliconix |
MOSFET P-CH 60V 1.1A 4DIP |
![]() |
NVMFS5C423NLWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 31A/150A 5DFN |
![]() |
DMP4013SPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 11A PWRDI5060 |
![]() |
SI2333DDS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 6A SOT23-3 |
![]() |
STP80N6F6STMicroelectronics |
MOSFET N-CH 60V 110A TO220 |
![]() |
FQU2N80TURochester Electronics |
MOSFET N-CH 800V 1.8A IPAK |
![]() |
TPH11003NL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 30V 32A 8SOP |
![]() |
IRL3714ZSPBFRochester Electronics |
MOSFET N-CH 20V 36A D2PAK |
![]() |
NVD5865NLT4GRochester Electronics |
MOSFET N-CH 60V 10A/46A DPAK |
![]() |
IXFP130N10T2Wickmann / Littelfuse |
MOSFET N-CH 100V 130A TO220AB |
![]() |
TK12Q60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 11.5A IPAK |
![]() |
IPD25N06S240ATMA1Rochester Electronics |
MOSFET N-CH 55V 29A TO252-3 |
![]() |
IPA041N04NGXKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 70A TO220-FP |