English
简体中文
CAP TANT 12UF 10% 20V AXIAL
CAP CER 330PF 2.5KV X7R 1825
RELAY GEN PURPOSE DPST 15A 18V
MOSFET N-CH 200V 90A ISOPLUS247
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PolarHT™ HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 90A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 22mOhm @ 45A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 240 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 7500 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | ISOPLUS247™ |
| 包/箱: | ISOPLUS247™ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PSMN057-200B,118Nexperia |
MOSFET N-CH 200V 39A D2PAK |
|
IPU60R1K0CEAKMA2Rochester Electronics |
MOSFET N-CH 600V 4.3A TO251-3 |
|
IPP65R190C7Rochester Electronics |
IPP65R190 - 650V AND 700V COOLMO |
|
MTMF82310BBFPanasonic |
MOSFET N-CH 30V 18A SO8-F1-B |
|
IPB011N04NGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 180A TO263-7 |
|
SI7806ADN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 9A PPAK1212-8 |
|
IPB90N04S402ATMA1Rochester Electronics |
MOSFET N-CH 40V 90A D2PAK |
|
IRFB7440PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 120A TO220AB |
|
STW26N60M2STMicroelectronics |
MOSFET N-CH 600V 20A TO247 |
|
IRLU3410PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 17A IPAK |
|
SPP80N03S2L-06Rochester Electronics |
MOSFET N-CH 30V 80A TO220-3 |
|
STP35N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V TO220 |
|
STF13N60M2STMicroelectronics |
MOSFET N-CH 600V 11A TO220FP |