English
简体中文
RES 576 OHM 0.5% 1/4W 1210
IDC CABLE - CKR10G/AE10G/CCE10G
MOSFET N-CH 55V 30A TO251AA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 24.5mOhm @ 18A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 27 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 740 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 48W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-251AA |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF7842TRIR (Infineon Technologies) |
MOSFET N-CH 40V 18A 8SO |
|
94-4156PBFIR (Infineon Technologies) |
MOSFET N-CH 20V 75A DPAK |
|
IRL3715ZLPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 50A TO262 |
|
IPP80N06S2L11AKSA1IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO220-3 |
|
STD90N4F3STMicroelectronics |
MOSFET N-CH 40V 80A DPAK |
|
ZXM61P03FTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 1.1A SOT23-3 |
|
FQU6N40CTU_NBEA001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 4.5A IPAK |
|
AON6418Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 14A/36A 8DFN |
|
NP33N06YDG-E1-AYRenesas Electronics America |
MOSFET N-CH 60V 33A 8HSON |
|
IRL3103SPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 64A D2PAK |
|
SPP100N04S2-04IR (Infineon Technologies) |
MOSFET N-CH 40V 100A TO220-3 |
|
BSP613PL6327HUSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 2.9A SOT223-4 |
|
SI4484EY-T1-E3Vishay / Siliconix |
MOSFET N-CH 100V 4.8A 8SO |