







MOSFET N/P-CH 30V 9A/7.4A 8SOP
I2C CONTROL, 4-OUTPUT, ANY FREQU
THERMOSTAT 105DEG C NC TO220-2
MOD LINKCONNECT EU
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Last Time Buy |
| 场效应管类型: | N and P-Channel |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A, 7.4A |
| rds on (max) @ id, vgs: | 17mOhm @ 4.5A, 10V |
| vgs(th) (最大值) @ id: | 2.3V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 17nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 1190pF @ 10V |
| 功率 - 最大值: | 450mW |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
MCH6660-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V 2A/1.5A 6MCPH |
|
|
TPS1120DRTexas Instruments |
MOSFET 2P-CH 15V 1.17A 8-SOIC |
|
|
TSM3911DCX6 RFGTSC (Taiwan Semiconductor) |
MOSFET 2 P-CH 20V 2.2A SOT26 |
|
|
SI7972DP-T1-GE3Vishay / Siliconix |
MOSFET 2 N-CH 30V POWERPAK SO8 |
|
|
MAX5054BATA+Rochester Electronics |
BUFFER/INVERTER BASED MOSFET DRI |
|
|
IRF7509TRPBFIR (Infineon Technologies) |
MOSFET N/P-CH 30V 2.7A/2A MICRO8 |
|
|
SI7913DN-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 20V 5A 1212-8 |
|
|
SQJ968EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 60V POWERPAK SO8 |
|
|
NTLUD3A260PZTAGSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 1.3A 6UDFN |
|
|
MPIC2117PRochester Electronics |
BUFFER/INVERTER BASED MOSFET DRI |
|
|
ALD210804PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
|
|
SI7236DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 60A PPAK SO-8 |
|
|
FDMB2307NZSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 6MLP |